BUL52B SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: BUL52B
Gamintojas: SEME-LAB[Seme
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- BUL50A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR - BUL50B
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | SOT-93 - BUL510
High Voltage Fast-Switching NPN Power Transistor(???????????PN???????? - BUL51003
HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR - BUL51A
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 30A I(C) | SOT-93 - BUL51B
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 40A I(C) | SOT-93 - BUL52
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL52A
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 4A I(C) | TO-220 - BUL52AFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL52BFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL53A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL53B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL53BSMD
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED SILICON POWER TRANSISTOR - BUL54
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR