2SD201206 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SD201206
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SD201
Silicon Power Transistors - 2SD2010
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE - 2SD2010A
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP - 2SD2010B
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP - 2SD2010C
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP - 2SD2011
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE - 2SD2011A
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP - 2SD2011B
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP - 2SD2011C
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP - 2SD2012
TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) - 2SD201203
SILICON POWER TRANSISTOR - 2SD201206
Silicon Triple Diffused Type - 2SD2012_03
NPN SILICON POWER TRANSISTOR - 2SD2012_06
Silicon NPN Triple Diffused Type - 2SD2014
Silicon Power Transistors