2SD114006 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SD114006
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SD1140
EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) - 2SD114006
Silicon Epitaxial Type Process) (Darlington Power Transistor) - 2SD1140_06
Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor) - 2SD1141
Silicon Darlington Power Transistor - 2SD1141K
Silicon NPN Triple Diffused(???????PN????? - 2SD1145
High-Current Driver Applications - 2SD1145E
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92VAR - 2SD1145F
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92VAR - 2SD1145G
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92VAR - 2SD1148
PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER CONVERTER) - 2SD1149
Silicon epitaxial planer type(For low-frequency amplification) - 2SD1149R
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20MA I(C) | TO-236AB - 2SD1149S
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20MA I(C) | TO-236AB