2SC342006 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SC342006
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SC3420
EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) - 2SC342006
Silicon Epitaxial Type Process) Strobe Flash Applications - 2SC3420BL
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 - 2SC3420GR
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 - 2SC3420Y
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 - 2SC3420_06
Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications - 2SC3421
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS - 2SC342106
Silicon Epitaxial Type Process) Audio Frequency Power Amplifier Applications - 2SC3421O
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 - 2SC3421Y
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 - 2SC3421_06
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications - 2SC3422
EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, SPEED SWITCHING) - 2SC342206
Silicon Epitaxial Type Process) Audio Frequency Power Amplifier - 2SC3422O
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126 - 2SC3422Y
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126