2SC195907 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SC195907
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SC1953
- 2SC1953Q
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1953R
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1953S
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1953T
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1955
TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 800MA I(C) | TO-39 - 2SC1959
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS - 2SC195907
Silicon Epitaxial Type process) - 2SC1959GR
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92 - 2SC1959O
BJT - 2SC1959Y
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-92 - 2SC1959_07
Silicon PNP Epitaxial Type (PCT process)