2SA96607 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SA96607
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SA963
SILICON EPITAXIAL PLANAR - 2SA963P
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 - 2SA963Q
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 - 2SA963R
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 - 2SA965
TOSHIBA TRANSISTOR SILICON EPITAXIAL TYPE PROCESS) - 2SA96507
Power Amplifier ApplicationsDriver-Stage Amplifier Applications - 2SA965O
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR - 2SA965Y
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR - 2SA965_07
Power Amplifier ApplicationsDriver-Stage Amplifier Applications - 2SA966
TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) - 2SA96607
Audio Power Amplifier Applications - 2SA966O
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-92VAR - 2SA966Y
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-92VAR - 2SA966_07
Audio Power Amplifier Applications - 2SA967
TRANSISTOR | BJT | PNP | 30MA I(C) | MICRO-T