2SC3836 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SC3836
Gamintojas: Hitachi Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SC3000
Epitaxial Planar Silicon Transistor - 2SC3000D
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3000E
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3000F
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3001
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3004
Silicon NPN Epitaxial(???NPN????? - 2SC3006
TRANSISTOR BAND POWER AMPLIFIER APPLICATIONS) - 2SC3007
SILICON EPITAXIAL TYPE PROCESS) - 2SC3011
UHF~C BAND NOISE AMPLIFIER APPLICATIONS - 2SC3012
SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR - 2SC3017
EPITAXIAL PLANAR TYPE - 2SC3018
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3019
EPITAXIAL PLANAR TYPE - 2SC3020
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3021
EPITAXIAL PLANAR TYPE POWER TRANSISTOR)