2SB937AP SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SB937AP
Gamintojas: PANASONIC[Panasonic Semiconductor]
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SB930
Silicon epitaxial planar type(For power amplification) - 2SB930A
Silicon epitaxial planar type(For power amplification) - 2SB930AP
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR - 2SB930AQ
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR - 2SB930AR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR - 2SB930P
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-262VAR - 2SB930Q
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-262VAR - 2SB930R
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR - 2SB931
Silicon epitaxial planar type(For power switching) - 2SB931P
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR - 2SB931Q
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR - 2SB931R
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR - 2SB932
Silicon Epitaxial Planar Type - 2SB932P
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR - 2SB932Q
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR