2SB1019 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SB1019
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SB1000
- 2SB1000A
FREQUENCY POWER AMPLIFIER Complementary pair 1366A - 2SB1001
Silicon Epitaxial - 2SB1001BH
BJT - 2SB1001BJ
BJT - 2SB1001BJTR-E
Silicon Epitaxial - 2SB1002
Silicon Epitaxial - 2SB1002CH
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 - 2SB1002CJ
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 - 2SB1002CJTL-E
Silicon Epitaxial - 2SB1005
Silicon PNP Power Transistors - 2SB1007
Epitaxial Planar Silicon Transistor - 2SB1008
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126 - 2SB1009
Epitaxial Planar Silicon Transistor - 2SB1010
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE