2SA135907 SPC, GRANDINėS, FUNKCIJA
Dalies pavadinimas: 2SA135907
Gamintojas: Toshiba Semiconductor
Pakuotė:
Aprašymas:
Pins:
Temperatūra: Min °C | Max °C
Dydis: KB
- 2SA1350
Silicon Epitaxial - 2SA1350B
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SPAK - 2SA1350C
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SPAK - 2SA1350D
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SPAK - 2SA1352
Ultrahigh-Definition Display Video Output Applications - 2SA1352C
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1352D
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1352E
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1352F
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1353
Ultrahigh-Definition Display Video Output Applications - 2SA1353C
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1353D
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1353E
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1353F
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SA1355
Silicon Power Transistors